Electric field effect on lowest excited-state binding energy of hydrogenic impurity in (In,Ga)N parabolic wire
- 作者: El Ghazi H.1,2, Jorio A.2
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隶属关系:
- Specials Mathematics
- LPS, Faculty of Sciences, Dhar EL Mehrez
- 期: 卷 50, 编号 4 (2016)
- 页面: 478-481
- 栏目: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://bakhtiniada.ru/1063-7826/article/view/196984
- DOI: https://doi.org/10.1134/S1063782616040102
- ID: 196984
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详细
Externally applied electric field and effective radius effects are investigated on the lowest excitedstate shallow-donor binding energy in (In,Ga)N-GaN parabolic wire within the framework of single band effective-mass approximation. The calculations are performed using the finite-difference method within the quasi-one-dimensional effective potential model. Our results reveal that: (i) the probability density is the largest on a circularity whose radius is the effective radius, (ii) the lowest excited-state binding energy is the largest for impurity located on this circularity while it starts to decrease when the impurity is away from the circularity and (iii) the binding energy is strongly-dependent on the complex interplay of spatial confinement, coulomb interaction and applied electric field.
作者简介
Haddou El Ghazi
Specials Mathematics; LPS, Faculty of Sciences, Dhar EL Mehrez
编辑信件的主要联系方式.
Email: hadghazi@gmail.com
摩洛哥, Rabat; Atlas Fes
Anouar Jorio
LPS, Faculty of Sciences, Dhar EL Mehrez
Email: hadghazi@gmail.com
摩洛哥, Atlas Fes
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