Electronic Properties of Semiconductors

Выпуск	Название	Файл
Том 50, № 6 (2016)	Matrix-type effect on the magnetotransport properties of Ni–AlO and Ni–NbO composite systems	(Eng)
Stognei O., Maliki A., Grebennikov A., Semenenko K., Bulovatskaya E., Sitnikov A.
Том 50, № 6 (2016)	Optical properties of In₂Se₃ thin films	(Eng)
Bodnar I.
Том 50, № 6 (2016)	Anomalous thermoelectric power in Hg₃In₂Te₆ crystals	(Eng)
Grushka O.
Том 50, № 6 (2016)	Role of electrostatic fluctuations in doped semiconductors upon the transition from band to hopping conduction (by the example of p-Ge:Ga)	(Eng)
Poklonski N., Vyrko S., Poklonskaya O., Zabrodskii A.
Том 50, № 6 (2016)	Specific features of the electrophysical parameters of NTD Si treated under different conditions of heat treatment	(Eng)
Gaidar G., Baranskii P.
Том 50, № 6 (2016)	On the tin impurity in the thermoelectric compound ZnSb: Charge-carrier generation and compensation	(Eng)
Prokofieva L., Konstantinov P., Shabaldin A.
Том 50, № 6 (2016)	Radiation-induced bistable centers with deep levels in silicon n⁺–p structures	(Eng)
Lastovskii S., Markevich V., Yakushevich H., Murin L., Krylov V.
Том 50, № 5 (2016)	Localization of the interband transitions in the bulk of the Brillouin zone of III–V compound crystals	(Eng)
Sobolev V., Perevoshchikov D.
Том 50, № 5 (2016)	X-ray conductivity of ZnSe single crystals	(Eng)
Degoda V., Podust G.
Том 50, № 4 (2016)	Features of photoinduced magnetism in some yttrium–iron-garnet single crystals	(Eng)
Vorob’eva N., Mityukhlyaev V.
Том 50, № 4 (2016)	Electronic structure of Pt-substituted clathrate silicides Ba₈Pt_xSi_46–x(x = 4–6)	(Eng)
Borshch N.
Том 50, № 4 (2016)	Dependence of mobility on the electron concentration upon scattering at polar optical phonons in A^III–N nitrides	(Eng)
Borisenko S.
Том 50, № 4 (2016)	Theory of the anomalous diffusion of carriers in disordered organic materials under conditions of the CELIV experiment	(Eng)
Nikitenko V., Amrakulov M., Khan M.
Том 50, № 4 (2016)	Specific temperature-related features of photoconductivity relaxation in PbSnTe:In films under interband excitation	(Eng)
Akimov A., Klimov A., Neizvestny I., Shumsky V., Epov V.
Том 50, № 4 (2016)	On the thermoelectric properties and band gap of silicon–germanium alloys in the high-temperature region	(Eng)
Inglizian P., Mikheyev V., Novinkov V., Shchedrov E.
Том 50, № 3 (2016)	On Measurements of the Electrons and Holes Impact-Ionization Coefficients in 4H–SiC	(Eng)
Kyuregyan A.
Том 50, № 3 (2016)	Effect of Phonon Drag on the Thermopower in a Parabolic Quantum Well	(Eng)
Hasanov K., Huseynov J., Dadashova V., Aliyev F.
Том 50, № 3 (2016)	A Quasi-Classical Model of the Hubbard Gap in Lightly Compensated Semiconductors	(Eng)
Poklonski N., Vyrko S., Kovalev A., Zabrodskii A.
Том 50, № 2 (2016)	On the theory of the two-photon linear photovoltaic effect in n-GaP	(Eng)
Rasulov V., Rasulov R.
Том 50, № 2 (2016)	Compositional dependence of the band gap of (CuIn₅S₈)_1–x · (FeIn₂S₄)_x alloys	(Eng)
Bodnar I., Victorov I., Jaafar M., Pauliukavets S.
Том 50, № 1 (2016)	On the complex structure of the optical spectra of a tetragonal calomel single crystal in a wide energy range	(Eng)
Sobolev V., Sobolev V., Anisimov D.
Том 50, № 1 (2016)	On the specific electrophysical properties of n-InSe single crystals	(Eng)
Abdinov A., Babaeva R., Rzaev R., Ragimova N., Amirova S.
Том 50, № 1 (2016)	On the preparation and photoelectric properties of Tl_1–xIn_1–xSn_xSe₂ (x = 0.1–0.25) alloys	(Eng)
Danylchuk S., Myronchuk G., Mozolyuk M., Bozhko V.
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