| Issue |
Title |
File |
| Vol 51, No 8 (2017) |
Experimental studies of the effects of atomic ordering in epitaxial GaxIn1–xP alloys on their structural and morphological properties |
(Eng)
|
|
Seredin P.V., Lenshin A.S., Khudyakov Y.Y., Arsentyev I.N., Kaliuzhny N.A., Mintairov S.A., Nikolaev D.N., Prutskij T.
|
| Vol 51, No 8 (2017) |
Effect of ammonium-sulfide solvent on the surface passivation of GaSb (100) |
(Eng)
|
|
Lebedev M.V., Lvova T.V., Pavlov S.I., Sedova I.V.
|
| Vol 51, No 8 (2017) |
InSb quantum dots produced by liquid-phase epitaxy on InGaAsSb/GaSb substrates |
(Eng)
|
|
Sokura L.A., Parkhomenko Y.A., Moiseev K.D., Nevedomsky V.N., Bert N.A.
|
| Vol 51, No 6 (2017) |
Influence of a static magnetic field on the formation of silicide phases in a Cu/Si(100) structure upon isothermal annealing |
(Eng)
|
|
Buchin E.Y., Naumov V.V., Vasilyev S.V.
|
| Vol 51, No 6 (2017) |
Effect of deposition temperature on the structure and optical properties of zinc-selenide films produced by radio-frequency magnetron sputtering |
(Eng)
|
|
Kobziev V.F., Zakirova R.M., Kostenkov N.V., Krylov P.N., Fedotova I.V.
|
| Vol 51, No 6 (2017) |
On the detachment of thin ITO films from silicon substrate by microsecond laser irradiation |
(Eng)
|
|
Kirienko D.A., Berezina O.Y.
|
| Vol 51, No 6 (2017) |
Structural features of Sm1–xEuxS thin polycrystalline films |
(Eng)
|
|
Kaminskii V.V., Solov’ev S.M., Khavrov G.D., Sharenkova N.V., Hirai S.
|
| Vol 51, No 5 (2017) |
InAs QDs in a metamorphic In0.25Ga0.75As matrix, grown by MOCVD |
(Eng)
|
|
Mintairov S.A., Kalyuzhnyy N.A., Maximov M.V., Nadtochiy A.M., Nevedomskiy V.N., Zhukov A.E.
|
| Vol 51, No 5 (2017) |
Ab initio studies of structural, electronic, optical, elastic and thermal properties of CuGaTe2 |
(Eng)
|
|
Singh P., Sharma S., Kumari S., Saraswat V.K., Sharma D., Verma A.S.
|
| Vol 51, No 4 (2017) |
In As1–xSbx heteroepitaxial structures on compositionally graded GaInSb and AlGaInSb buffer layers |
(Eng)
|
|
Guseynov R.R., Tanriverdiyev V.A., Kipshidze G., Aliyeva Y.N., Aliguliyeva K.V., Abdullayev N.A., Mamedov N.T.
|
| Vol 51, No 4 (2017) |
Surface nanostructuring in the carbon–silicon(100) system upon microwave plasma treatment |
(Eng)
|
|
Yafarov R.K., Shanygin V.Y.
|
| Vol 51, No 4 (2017) |
Investigation of spatial distribution of photocurrent in the plane of a Si p–n photodiode with GeSi nanoislands by scanning near-field optical microscopy |
(Eng)
|
|
Filatov D.O., Kazantseva I.A., Shengurov V.G., Chalkov V.Y., Denisov S.A., Gorshkov A.P., Mishkin V.P.
|
| Vol 51, No 4 (2017) |
Silicon nanowire array architecture for heterojunction electronics |
(Eng)
|
|
Solovan M.M., Brus V.V., Mostovyi A.I., Maryanchuk P.D., Orletskyi I.G., Kovaliuk T.T., Abashin S.L.
|
| Vol 51, No 3 (2017) |
Pulsed laser deposition of AlxGa1–xAs and GaP thin films onto Si substrates for photoelectric converters |
(Eng)
|
|
Lunin L.S., Lunina M.L., Devitsky O.V., Sysoev I.A.
|
| Vol 51, No 3 (2017) |
Properties of ZnO:Er3+ films obtained by the sol–gel method |
(Eng)
|
|
Malyutina-Bronskaya V.V., Semchenko A.V., Sidsky V.V., Fedorov V.E.
|
| Vol 51, No 3 (2017) |
Separation of III–N/SiC epitaxial heterostructure from a Si substrate and their transfer to other substrate types |
(Eng)
|
|
Kukushkin S.A., Osipov A.V., Red’kov A.V.
|
| Vol 51, No 3 (2017) |
Structural and optical properties of silicon-carbide nanowires produced by the high-temperature carbonization of silicon nanostructures |
(Eng)
|
|
Pavlikov A.V., Latukhina N.V., Chepurnov V.I., Timoshenko V.Y.
|
| Vol 51, No 3 (2017) |
Effect of energy density on the target on SnO2:Sb film properties when using a high-speed particle separator |
(Eng)
|
|
Parshina L.S., Khramova O.D., Novodvorsky O.A., Lotin A.A., Petukhov I.A., Putilin F.N., Shcherbachev K.D.
|
| Vol 51, No 2 (2017) |
Study of the structural and optical properties of GaP(N) layers synthesized by molecular-beam epitaxy on Si(100) 4° substrates |
(Eng)
|
|
Kryzhanovskaya N.V., Polubavkina Y.S., Nevedomskiy V.N., Nikitina E.V., Lazarenko A.A., Egorov A.Y., Maximov M.V., Moiseev E.I., Zhukov A.E.
|
| Vol 51, No 2 (2017) |
The temperature dependence of the conductivity peak values in the single and the double quantum well nanostructures n-InGaAs/GaAs after IR-illumination |
(Eng)
|
|
Arapov Y.G., Gudina S.V., Klepikova A.S., Neverov V.N., Harus G.I., Shelushinina N.G., Yakunin M.V.
|
| Vol 51, No 1 (2017) |
Epitaxial AlxGa1 – xAs:Mg alloys with different conductivity types |
(Eng)
|
|
Seredin P.V., Lenshin A.S., Arsentiev I.N., Zhabotinskii A.V., Nikolaev D.N., Tarasov I.S., Shamakhov V.V., Prutskij T., Leiste H., Rinke M.
|
| Vol 51, No 1 (2017) |
PEALD grown high-k ZrO2 thin films on SiC group IV compound semiconductor |
(Eng)
|
|
Khairnar A.G., Patil V.S., Agrawal K.S., Salunke R.S., Mahajan A.M.
|
| Vol 51, No 1 (2017) |
Application of B12N12 and B12P12 as two fullerene-like semiconductors for adsorption of halomethane: Density functional theory study |
(Eng)
|
|
Rad A.S.
|
| Vol 51, No 1 (2017) |
InGaN/GaN light-emitting diode microwires of submillimeter length |
(Eng)
|
|
Lundin W.V., Rodin S.N., Sakharov A.V., Lundina E.Y., Usov S.O., Zadiranov Y.M., Troshkov S.I., Tsatsulnikov A.F.
|
| Vol 51, No 1 (2017) |
Surface texture of single-crystal silicon oxidized under a thin V2O5 layer |
(Eng)
|
|
Nikitin S.E., Verbitskiy V.N., Nashchekin A.V., Trapeznikova I.N., Bobyl A.V., Terukova E.E.
|
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