Fabrication, Treatment, and Testing of Materials and Structures

Issue Title File
Vol 51, No 8 (2017) Experimental studies of the effects of atomic ordering in epitaxial GaxIn1–xP alloys on their structural and morphological properties PDF
(Eng)
Seredin P.V., Lenshin A.S., Khudyakov Y.Y., Arsentyev I.N., Kaliuzhny N.A., Mintairov S.A., Nikolaev D.N., Prutskij T.
Vol 51, No 8 (2017) Effect of ammonium-sulfide solvent on the surface passivation of GaSb (100) PDF
(Eng)
Lebedev M.V., Lvova T.V., Pavlov S.I., Sedova I.V.
Vol 51, No 8 (2017) InSb quantum dots produced by liquid-phase epitaxy on InGaAsSb/GaSb substrates PDF
(Eng)
Sokura L.A., Parkhomenko Y.A., Moiseev K.D., Nevedomsky V.N., Bert N.A.
Vol 51, No 6 (2017) Influence of a static magnetic field on the formation of silicide phases in a Cu/Si(100) structure upon isothermal annealing PDF
(Eng)
Buchin E.Y., Naumov V.V., Vasilyev S.V.
Vol 51, No 6 (2017) Effect of deposition temperature on the structure and optical properties of zinc-selenide films produced by radio-frequency magnetron sputtering PDF
(Eng)
Kobziev V.F., Zakirova R.M., Kostenkov N.V., Krylov P.N., Fedotova I.V.
Vol 51, No 6 (2017) On the detachment of thin ITO films from silicon substrate by microsecond laser irradiation PDF
(Eng)
Kirienko D.A., Berezina O.Y.
Vol 51, No 6 (2017) Structural features of Sm1–xEuxS thin polycrystalline films PDF
(Eng)
Kaminskii V.V., Solov’ev S.M., Khavrov G.D., Sharenkova N.V., Hirai S.
Vol 51, No 5 (2017) InAs QDs in a metamorphic In0.25Ga0.75As matrix, grown by MOCVD PDF
(Eng)
Mintairov S.A., Kalyuzhnyy N.A., Maximov M.V., Nadtochiy A.M., Nevedomskiy V.N., Zhukov A.E.
Vol 51, No 5 (2017) Ab initio studies of structural, electronic, optical, elastic and thermal properties of CuGaTe2 PDF
(Eng)
Singh P., Sharma S., Kumari S., Saraswat V.K., Sharma D., Verma A.S.
Vol 51, No 4 (2017) In As1–xSbx heteroepitaxial structures on compositionally graded GaInSb and AlGaInSb buffer layers PDF
(Eng)
Guseynov R.R., Tanriverdiyev V.A., Kipshidze G., Aliyeva Y.N., Aliguliyeva K.V., Abdullayev N.A., Mamedov N.T.
Vol 51, No 4 (2017) Surface nanostructuring in the carbon–silicon(100) system upon microwave plasma treatment PDF
(Eng)
Yafarov R.K., Shanygin V.Y.
Vol 51, No 4 (2017) Investigation of spatial distribution of photocurrent in the plane of a Si p–n photodiode with GeSi nanoislands by scanning near-field optical microscopy PDF
(Eng)
Filatov D.O., Kazantseva I.A., Shengurov V.G., Chalkov V.Y., Denisov S.A., Gorshkov A.P., Mishkin V.P.
Vol 51, No 4 (2017) Silicon nanowire array architecture for heterojunction electronics PDF
(Eng)
Solovan M.M., Brus V.V., Mostovyi A.I., Maryanchuk P.D., Orletskyi I.G., Kovaliuk T.T., Abashin S.L.
Vol 51, No 3 (2017) Structural and optical properties of silicon-carbide nanowires produced by the high-temperature carbonization of silicon nanostructures PDF
(Eng)
Pavlikov A.V., Latukhina N.V., Chepurnov V.I., Timoshenko V.Y.
Vol 51, No 3 (2017) Effect of energy density on the target on SnO2:Sb film properties when using a high-speed particle separator PDF
(Eng)
Parshina L.S., Khramova O.D., Novodvorsky O.A., Lotin A.A., Petukhov I.A., Putilin F.N., Shcherbachev K.D.
Vol 51, No 3 (2017) Pulsed laser deposition of AlxGa1–xAs and GaP thin films onto Si substrates for photoelectric converters PDF
(Eng)
Lunin L.S., Lunina M.L., Devitsky O.V., Sysoev I.A.
Vol 51, No 3 (2017) Properties of ZnO:Er3+ films obtained by the sol–gel method PDF
(Eng)
Malyutina-Bronskaya V.V., Semchenko A.V., Sidsky V.V., Fedorov V.E.
Vol 51, No 3 (2017) Separation of III–N/SiC epitaxial heterostructure from a Si substrate and their transfer to other substrate types PDF
(Eng)
Kukushkin S.A., Osipov A.V., Red’kov A.V.
Vol 51, No 2 (2017) Study of the structural and optical properties of GaP(N) layers synthesized by molecular-beam epitaxy on Si(100) 4° substrates PDF
(Eng)
Kryzhanovskaya N.V., Polubavkina Y.S., Nevedomskiy V.N., Nikitina E.V., Lazarenko A.A., Egorov A.Y., Maximov M.V., Moiseev E.I., Zhukov A.E.
Vol 51, No 2 (2017) The temperature dependence of the conductivity peak values in the single and the double quantum well nanostructures n-InGaAs/GaAs after IR-illumination PDF
(Eng)
Arapov Y.G., Gudina S.V., Klepikova A.S., Neverov V.N., Harus G.I., Shelushinina N.G., Yakunin M.V.
Vol 51, No 1 (2017) InGaN/GaN light-emitting diode microwires of submillimeter length PDF
(Eng)
Lundin W.V., Rodin S.N., Sakharov A.V., Lundina E.Y., Usov S.O., Zadiranov Y.M., Troshkov S.I., Tsatsulnikov A.F.
Vol 51, No 1 (2017) Surface texture of single-crystal silicon oxidized under a thin V2O5 layer PDF
(Eng)
Nikitin S.E., Verbitskiy V.N., Nashchekin A.V., Trapeznikova I.N., Bobyl A.V., Terukova E.E.
Vol 51, No 1 (2017) Nanoscale Cu2O films: Radio-frequency magnetron sputtering and structural and optical studies PDF
(Eng)
Kudryashov D.A., Gudovskikh A.S., Babichev A.V., Filimonov A.V., Mozharov A.M., Agekyan V.F., Borisov E.V., Serov A.Y., Filosofov N.G.
Vol 51, No 1 (2017) On the laser lift-off of lightly doped micrometer-thick n-GaN films from substrates via the absorption of IR radiation in sapphire PDF
(Eng)
Zubrilov A.S., Gorbunov R.I., Latishev F.E., Bochkareva N.I., Lelikov Y.S., Tarkhin D.V., Smirnov A.N., Davydov V.Y., Sheremet I.A., Shreter Y.G., Voronenkov V.V., Virko M.V., Kogotkov V.S., Leonidov A.A., Pinchuk A.V.
Vol 51, No 1 (2017) Epitaxial AlxGa1 – xAs:Mg alloys with different conductivity types PDF
(Eng)
Seredin P.V., Lenshin A.S., Arsentiev I.N., Zhabotinskii A.V., Nikolaev D.N., Tarasov I.S., Shamakhov V.V., Prutskij T., Leiste H., Rinke M.
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