In As 1– x  Sb  x   heteroepitaxial structures on compositionally graded GaInSb and AlGaInSb buffer layers

R. R. Guseynov; V. A. Tanriverdiyev; G. Kipshidze; Ye. N. Aliyeva; Kh. V. Aliguliyeva; N. A. Abdullayev; N. T. Mamedov

doi:10.1134/S1063782617040066

In As_1–xSb_x heteroepitaxial structures on compositionally graded GaInSb and AlGaInSb buffer layers

Авторлар: Guseynov R.R.¹, Tanriverdiyev V.A.¹, Kipshidze G.², Aliyeva Y.N.¹, Aliguliyeva K.V.¹, Abdullayev N.A.¹, Mamedov N.T.¹
Мекемелер:
1. Institute of Physics
2. Stony Brook University
Шығарылым: Том 51, № 4 (2017)
Беттер: 524-530
Бөлім: Fabrication, Treatment, and Testing of Materials and Structures
URL: https://bakhtiniada.ru/1063-7826/article/view/199790
DOI: https://doi.org/10.1134/S1063782617040066
ID: 199790

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Аннотация

Unrelaxed InAs_1–xSb_x (x = 0.43 and 0.38) alloy layers are produced by molecular-beam epitaxy on compositionally graded GaInSb and AlGaInSb buffer layers. The high quality of the thin films produced is confirmed by the results of high-resolution X-ray diffraction analysis and micro-Raman studies. The twomode type of transformation of the phonon spectra of InAs_1–xSb_x alloys is established.