| Edição |
Título |
Arquivo |
| Volume 52, Nº 13 (2018) |
AlGaAs/GaAs Photovoltaic Converters of Tritium Radioluminescent-Lamp Radiation |
(Eng)
|
|
Khvostikov V., Kalinovskiy V., Sorokina S., Shvarts M., Potapovich N., Khvostikova O., Vlasov A., Andreev V.
|
| Volume 52, Nº 13 (2018) |
Radiation-Induced Damage of Silicon-Carbide Diodes by High-Energy Particles |
(Eng)
|
|
Strel’chuk A., Kozlovski V., Lebedev A.
|
| Volume 52, Nº 12 (2018) |
Violation of Local Electroneutrality in the Quantum Well of a Semiconductor Laser with Asymmetric Barrier Layers |
(Eng)
|
|
Asryan L., Zubov F., BalezinaPolubavkina Y., Moiseev E., Muretova M., Kryzhanovskaya N., Maximov M., Zhukov A.
|
| Volume 52, Nº 12 (2018) |
Avalanche Breakdown Stability of High Voltage (1430 V) 4H-SiC p+–n0–n+ Diodes |
(Eng)
|
|
Ivanov P., Samsonova T., Potapov A.
|
| Volume 52, Nº 12 (2018) |
Galvanic and Capacitive Effects in n-SiC Conductivity Compensation by Radiation-Induced Defects |
(Eng)
|
|
Kozlovski V., Lebedev A., Davydovskaya K., Lyubimova Y.
|
| Volume 52, Nº 10 (2018) |
Specific Features of the IR Reflectance and Raman Spectra of Sb2Te3 – xSex Crystals |
(Eng)
|
|
Nemov S., Andreeva V., Ulashkevich Y., Povolotsky A., Allahkhah A.
|
| Volume 52, Nº 10 (2018) |
Impact of the Periphery Electrostatic Field on the Photovoltaic Effect in Metal–Semiconductor Contacts with a Schottky Barrier |
(Eng)
|
|
Torkhov N.
|
| Volume 52, Nº 10 (2018) |
Luminescence Spectra of High-Power Violet and Ultraviolet Gallium Nitride-Based LEDs |
(Eng)
|
|
Volkov V., Kogan L., Turkin A., Yunovich A.
|
| Volume 52, Nº 10 (2018) |
Analysis of the Features of Hot-Carrier Degradation in FinFETs |
(Eng)
|
|
Makarov A., Tyaginov S., Kaczer B., Jech M., Chasin A., Grill A., Hellings G., Vexler M., Linten D., Grasser T.
|
| Volume 52, Nº 10 (2018) |
Determining the Hydrogen Concentration from the Photovoltage of Pd–Oxide–InP MIS Structures |
(Eng)
|
|
Grebenshchikova E., Salikhov K., Sidorov V., Shutaev V., Yakovlev Y.
|
| Volume 52, Nº 10 (2018) |
Effect of Low-Dose Proton Irradiation on the Electrical Characteristics of 4H-SiC Junction Diodes |
(Eng)
|
|
Ivanov P., Potapov A., Kudoyarov M., Samsonova T.
|
| Volume 52, Nº 10 (2018) |
Effect of Epitaxial-Structure Design and Growth Parameters on the Characteristics of Metamorphic Lasers of the 1.46-μm Optical Range Based on Quantum Dots Grown on GaAs Substrates |
(Eng)
|
|
Maximov M., Nadtochiy A., Shernyakov Y., Payusov A., Vasil’ev A., Ustinov V., Serin A., Gordeev N., Zhukov A.
|
| Volume 52, Nº 9 (2018) |
Backward-Diode Heterostructure Based on a Zinc-Oxide Nanoarray Formed by Pulsed Electrodeposition and a Cooper-Iodide Film Grown by the SILAR Method |
(Eng)
|
|
Klochko N., Kopach V., Khrypunov G., Korsun V., Lyubov V., Zhadan D., Otchenashko A., Kirichenko M., Khrypunov M.
|
| Volume 52, Nº 9 (2018) |
GaSb/GaAlAsSb Heterostructure Photodiodes for the Near-IR Spectral Range |
(Eng)
|
|
Kunitsyna E., Andreev I., Konovalov G., Ivanov E., Pivovarova A., Il’inskaya N., Yakovlev Y.
|
| Volume 52, Nº 9 (2018) |
Lowering the Lasing Threshold by Doping in Mid-Infrared Lasers Based on HgCdTe with HgTe Quantum Wells |
(Eng)
|
|
Dubinov A., Aleshkin V., Morozov S.
|
| Volume 52, Nº 8 (2018) |
Modulation of the Charge of Germanium MIS Structures with Fluorine-Containing Insulators |
(Eng)
|
|
Shalimova M.
|
| Volume 52, Nº 8 (2018) |
Effect of Deep Centers on the Statistical Delay of Microplasma Breakdown in Gallium-Arsenide Light-Emitting Diodes |
(Eng)
|
|
Ionychev V., Shesterkina A.
|
| Volume 52, Nº 8 (2018) |
On the Fabrication of Graphene p–n Junctions and Their Application for Detecting Terahertz Radiation |
(Eng)
|
|
Vasileva G., Vasilyev Y., Novikov S., Danilov S., Ganichev S.
|
| Volume 52, Nº 8 (2018) |
Room Temperature Lasing of Multi-Stage Quantum-Cascade Lasers at 8 μm Wavelength |
(Eng)
|
|
Babichev A., Gladyshev A., Kurochkin A., Kolodeznyi E., Sokolovskii G., Bougrov V., Karachinsky L., Novikov I., Bousseksou A., Egorov A.
|
| Volume 52, Nº 7 (2018) |
Investigation of the Characteristics of Heterojunction Solar Cells Based on Thin Single-Crystal Silicon Wafers |
(Eng)
|
|
Terukov E., Abramov A., Andronikov D., Emtsev K., Panaiotti I., Titov A., Shelopin G.
|
| Volume 52, Nº 7 (2018) |
Effect of Deep Centers on Charge-Carrier Confinement in InGaN/GaN Quantum Wells and on LED Efficiency |
(Eng)
|
|
Bochkareva N., Shreter Y.
|
| Volume 52, Nº 7 (2018) |
Diversity of Properties of Device Structures Based on Group-III Nitrides, Related to Modification of the Fractal-Percolation System |
(Eng)
|
|
Emtsev V., Gushchina E., Petrov V., Tal’nishnih N., Chernyakov A., Shabunina E., Shmidt N., Usikov A., Kartashova A., Zybin A., Kozlovski V., Kudoyarov M., Saharov A., Oganesyan A., Poloskin D., Lundin V.
|
| Volume 52, Nº 7 (2018) |
Study of Deep Levels in a HIT Solar Cell |
(Eng)
|
|
Shilina D., Litvinov V., Maslov A., Mishustin V., Terukov E., Titov A., Vikhrov S., Vishnyakov N., Gudzev V., Ermachikhin A.
|
| Volume 52, Nº 6 (2018) |
High-Sensitivity Photodetector Based on Atomically Thin MoS2 |
(Eng)
|
|
Lavrov S., Shestakova A., Mishina E., Efimenkov Y., Sigov A.
|
| Volume 52, Nº 6 (2018) |
Tunneling Current in Oppositely Connected Schottky Diodes Formed by Contacts between Degenerate n-GaN and a Metal |
(Eng)
|
|
Maiboroda I., Grishchenko J., Ezubchenko I., Sokolov I., Chernych I., Andreev A., Zanaveskin M.
|
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