Luminescence Spectra of High-Power Violet and Ultraviolet Gallium Nitride-Based LEDs


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The electroluminescence spectra of high-power light-emitting diodes (LEDs) based on pn heterostructures of the InGaN/AlGaN/GaN type emitting in the visible short-wavelength and ultraviolet spectral regions (the range from 370 to 460 nm) are investigated. The shape of spectra is described by a model taking into account a two-dimensional combined density of states and potential fluctuations. Additional long-wavelength peaks are found in emission spectra. The emission power of ultraviolet and violet LEDs reaches 233 mW at a current of 350 mA, and the external quantum yield reaches 23% at the maximum (near a current of 100 mA).

作者简介

V. Volkov

Moscow State University

Email: andrey@turkin.su
俄罗斯联邦, Moscow, 119991

L. Kogan

Scientific-and-Production Center “Optel”

Email: andrey@turkin.su
俄罗斯联邦, Moscow, 105187

A. Turkin

Moscow State University

编辑信件的主要联系方式.
Email: andrey@turkin.su
俄罗斯联邦, Moscow, 119991

A. Yunovich

Moscow State University

Email: andrey@turkin.su
俄罗斯联邦, Moscow, 119991

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