| 期 |
标题 |
文件 |
| 卷 52, 编号 11 (2018) |
Formation and Properties of Locally Tensile Strained Ge Microstructures for Silicon Photonics |
(Eng)
|
|
Novikov A., Yurasov D., Morozova E., Skorohodov E., Verbus V., Yablonskiy A., Baidakova N., Gusev N., Kudryavtsev K., Nezhdanov A., Mashin A.
|
| 卷 52, 编号 11 (2018) |
Calculation of Multiply Charged States of Impurity-Defect Centers in Epitaxial Hg1 –xCdxTe Layers |
(Eng)
|
|
Kozlov D., Rumyantsev V., Morozov S., Kadykov A., Fadeev M., Hübers H., Gavrilenko V.
|
| 卷 52, 编号 11 (2018) |
Radiation Resistance of Terahertz Diodes Based on GaAs/AlAs Superlattices |
(Eng)
|
|
Pavelyev D., Vasilev A., Kozlov V., Obolenskaya E.
|
| 卷 52, 编号 11 (2018) |
Effect of Features of the Band Spectrum on the Characteristics of Stimulated Emission in Narrow-Gap Heterostructures with HgCdTe Quantum Wells |
(Eng)
|
|
Rumyantsev V., Kulikov N., Kadykov A., Fadeev M., Ikonnikov A., Kazakov A., Zholudev M., Aleshkin V., Utochkin V., Mikhailov N., Dvoretskii S., Morozov S., Gavrilenko V.
|
| 卷 52, 编号 11 (2018) |
Nucleation of Three-Dimensional Ge Islands on a Patterned Si(100) Surface |
(Eng)
|
|
Rudin S., Smagina Z., Zinovyev V., Novikov P., Nenashev A., Rodyakina E., Dvurechenskii A.
|
| 卷 52, 编号 11 (2018) |
Temperature Dependences of the Threshold Current and Output Power of a Quantum-Cascade Laser Emitting at 3.3 THz |
(Eng)
|
|
Khabibullin R., Shchavruk N., Ponomarev D., Ushakov D., Afonenko A., Vasil’evskii I., Zaycev A., Danilov A., Volkov O., Pavlovskiy V., Maremyanin K., Gavrilenko V.
|
| 卷 52, 编号 11 (2018) |
Reduction of Internal Loss and Thermal Resistance in Diode Lasers with Coupled Waveguides |
(Eng)
|
|
Zhukov A., Gordeev N., Shernyakov Y., Payusov A., Serin A., Kulagina M., Mintairov S., Kalyuzhnyy N., Maximov M.
|
| 卷 52, 编号 11 (2018) |
Magnetooptics of HgTe/CdTe Quantum Wells with Giant Rashba Splitting in Magnetic Fields up to 34 T |
(Eng)
|
|
Bovkun L., Maremyanin K., Ikonnikov A., Spirin K., Aleshkin V., Potemski M., Piot B., Orlita M., Mikhailov N., Dvoretskii S., Gavrilenko V.
|
| 卷 52, 编号 11 (2018) |
Gapless Dirac Electron Mobility and Quantum Time in HgTe Quantum Wells |
(Eng)
|
|
Dobretsova A., Kvon Z., Braginskii L., Entin M., Mikhailov N.
|
| 卷 52, 编号 11 (2018) |
Spinodal Decomposition in InSb/AlAs Heterostructures |
(Eng)
|
|
Abramkin D., Bakarov A., Gutakovskii A., Shamirzaev T.
|
| 卷 52, 编号 11 (2018) |
Plasma Chemical Etching of Gallium Arsenide in C2F5Cl-Based Inductively Coupled Plasma |
(Eng)
|
|
Okhapkin A., Yunin P., Drozdov M., Kraev S., Skorokhodov E., Shashkin V.
|
| 卷 52, 编号 11 (2018) |
The Effect of the Composition of a Carrier Gas during the Growth of a Mn delta-Layer on the Electrical and Magnetic Properties of GaAs Structures |
(Eng)
|
|
Kalentyeva I., Vikhrova O., Danilov Y., Zvonkov B., Kudrin A., Antonov I.
|
| 卷 52, 编号 11 (2018) |
Development of a Physical-Topological Model for the Response of a High-Power Vertical DMOS Transistor to the Effect of Pulsed Gamma-Radiation |
(Eng)
|
|
Khananova A., Obolensky S.
|
| 卷 52, 编号 11 (2018) |
“Extremum Loop” Model for the Valence-Band Spectrum of a HgTe/HgCdTe Quantum Well with an Inverted Band Structure in the Semimetallic Phase |
(Eng)
|
|
Gudina S., Bogolyubskii A., Neverov V., Shelushinina N., Yakunin M.
|
| 卷 52, 编号 11 (2018) |
Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates |
(Eng)
|
|
Abramkin D., Petrushkov M., Putyato M., Semyagin B., Shamirzaev T.
|
| 卷 52, 编号 11 (2018) |
Application of the Locally Nonequilibrium Diffusion-Drift Cattaneo–Vernotte Model to the Calculation of Photocurrent Relaxation in Diode Structures under Subpicosecond Pulses of Ionizing Radiation |
(Eng)
|
|
Puzanov A., Obolenskiy S., Kozlov V.
|
| 卷 52, 编号 11 (2018) |
Verification of the Hypothesis on the Thermoelastic Nature of Deformation of a (0001)GaN Layer Grown on the Sapphire a-Cut |
(Eng)
|
|
Drozdov Y., Khrikin O., Yunin P.
|
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