GaAs-Based Laser Diode with InGaAs Waveguide Quantum Wells

N. V. Dikareva; B. N. Zvonkov; I. V. Samartsev; S. M. Nekorkin; N. V. Baidus; A. A. Dubinov

doi:10.1134/S1063782619160085

GaAs-Based Laser Diode with InGaAs Waveguide Quantum Wells

Autores: Dikareva N.V.¹, Zvonkov B.N.¹, Samartsev I.V.¹, Nekorkin S.M.¹, Baidus N.V.¹, Dubinov A.A.¹^,2
Afiliações:
1. National Research Lobachevsky State University of Nizhny Novgorod
2. Institute for Physics of Microstructures, Russian Academy of Sciences
Edição: Volume 53, Nº 12 (2019)
Páginas: 1709-1711
Seção: Physics of Semiconductor Devices
URL: https://bakhtiniada.ru/1063-7826/article/view/207423
DOI: https://doi.org/10.1134/S1063782619160085
ID: 207423

Citar

Texto integral

Acesso aberto
Acesso é fechado

Acesso está concedido
Acesso é fechado

Somente assinantes

Resumo
Sobre autores
Bibliografia
Arquivos suplementares
Estatísticas

Resumo

The results of studying a GaAs-based laser with InGaAs waveguide quantum wells, which operates at room temperature in the electric-pumping mode, are presented. The minimal generation threshold is 15 A. Stable lasing at a wavelength of 1010 nm is attained, and the width of the radiation pattern in the plane perpendicular to the structure layers is (10 ± 2)°.