Correction of the Reverse Recovery Characteristics of High-Voltage 4 H -SiC Junction Diodes Using Proton Irradiation

P. A. Ivanov; M. F. Kudoyarov; A. S. Potapov; T. P. Samsonova

doi:10.1134/S106378261906006X

Correction of the Reverse Recovery Characteristics of High-Voltage 4H-SiC Junction Diodes Using Proton Irradiation

Authors: Ivanov P.A.¹, Kudoyarov M.F.¹, Potapov A.S.¹, Samsonova T.P.¹
Affiliations:
1. Ioffe Institute
Issue: Vol 53, No 6 (2019)
Pages: 850-852
Section: Physics of Semiconductor Devices
URL: https://bakhtiniada.ru/1063-7826/article/view/206404
DOI: https://doi.org/10.1134/S106378261906006X
ID: 206404

Cite item

Full Text

Open Access
Restricted Access

Access granted
Restricted Access

Subscription Access

Abstract
About the authors
References
Supplementary files
Statistics

Abstract

The effect of proton irradiation on the electrical characteristics of high-voltage (3 kV) 4H-SiC junction diodes is studied. The diodes are irradiated through a 10-μm-thick Ni mask. The proton energy and the irradiation dose are 2.8 MeV and 4 × 10¹¹ cm^–2, respectively. After irradiation, the forward differential resistance of the diodes increased by ~35%, the reverse-recovery charge decreased by a factor of ~3, and the nature of the reverse recovery became “hard.”