Email this article Indium Arsenide-Based Spontaneous Emission Sources (Review: a Decade Later)
- Authors: Karandashev S.A.1, Matveev B.A.1, Remennyi M.A.2
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Affiliations:
- Ioffe Institute
- IoffeLED Ltd.
- Issue: Vol 53, No 2 (2019)
- Pages: 139-149
- Section: Review
- URL: https://bakhtiniada.ru/1063-7826/article/view/205651
- DOI: https://doi.org/10.1134/S1063782619020131
- ID: 205651
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Abstract
The results of investigations of light-emitting diodes based on heterostructures with an InAs active region grown by liquid phase and metalorganic vapor-phase epitaxy over the last decade are reviewed. The near-field pattern, L–I and I–V characteristics, and quantum efficiency of point-contact and flip-chip light-emitting diodes are analyzed in a wide temperature range.
About the authors
S. A. Karandashev
Ioffe Institute
Email: ioffeled@mail.ru
Russian Federation, St. Petersburg, 194021
B. A. Matveev
Ioffe Institute
Author for correspondence.
Email: ioffeled@mail.ru
Russian Federation, St. Petersburg, 194021
M. A. Remennyi
IoffeLED Ltd.
Email: ioffeled@mail.ru
Russian Federation, St. Petersburg, 194064
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