Email this article Deposition of Silicon Films Doped with Boron and Phosphorus by the Gas-Jet Plasma-Chemical Method
- Authors: Shchukin V.G.1, Sharafutdinov R.G.1, Konstantinov V.O.1
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Affiliations:
- Kutateladze Institute of Thermophysics, Siberian Branch, Russian Academy of Sciences
- Issue: Vol 53, No 1 (2019)
- Pages: 127-131
- Section: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://bakhtiniada.ru/1063-7826/article/view/205642
- DOI: https://doi.org/10.1134/S1063782619010184
- ID: 205642
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Abstract
Doped silicon films are fabricated using diborane and phosphine as doping gases by gas-jet plasma-chemical deposition with the application of an electron beam. The influence of the dopant-gas concentration, the addition of a fluorine-containing gas, and the background pressure on the conductivity and crystalline structure of silicon layers is investigated. Boron-doped amorphous films (a-Si:H) with a conductivity up to 5.2 × 10–3 (Ω cm)–1 are fabricated; when doping with phosphorus, microcrystalline silicon films (mc-Si:H) with a crystallinity up to 70% and conductivity at a level of 1 (Ω cm)–1 are fabricated.
About the authors
V. G. Shchukin
Kutateladze Institute of Thermophysics, Siberian Branch, Russian Academy of Sciences
Email: konstantinov@itp.nsc.ru
Russian Federation, Novosibirsk, 630090
R. G. Sharafutdinov
Kutateladze Institute of Thermophysics, Siberian Branch, Russian Academy of Sciences
Email: konstantinov@itp.nsc.ru
Russian Federation, Novosibirsk, 630090
V. O. Konstantinov
Kutateladze Institute of Thermophysics, Siberian Branch, Russian Academy of Sciences
Author for correspondence.
Email: konstantinov@itp.nsc.ru
Russian Federation, Novosibirsk, 630090
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