电邮这篇文章 Diode Polarization and Resistive Switching in Metal/TlGaSe2 Semiconductor/Metal Devices
- 作者: Seyidov M.Y.1,2, Suleymanov R.A.3, Şale Y.1, Kandemir B.B.1
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隶属关系:
- Department of Physics, Gebze Technical University
- Institute of Physics Azerbaijan National Academy of Sciences
- Department of Electrical and Electronics Engineering, Antalya Bilim University
- 期: 卷 52, 编号 16 (2018)
- 页面: 2007-2016
- 栏目: Physics of Semiconductor Devices
- URL: https://bakhtiniada.ru/1063-7826/article/view/205269
- DOI: https://doi.org/10.1134/S1063782618160273
- ID: 205269
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详细
The influence of electric field and current flow on the current–voltage (I–V) characteristics of TlGaSe2 layered semiconductor was investigated by using a two-point probe measurement system. Threshold-type switching in I–V characteristics associated with current–controlled memory effect was observed in all investigated samples. Observed switching characteristic is close to the most experimentally realizable memristive systems. Experimental findings were analyzed by using a model of metal–insulator–semiconductor–insulator–metal (MISIM) structure having memristive behavior.
作者简介
MirHasan Seyidov
Department of Physics, Gebze Technical University; Institute of Physics Azerbaijan National Academy of Sciences
编辑信件的主要联系方式.
Email: smirhasan@gtu.edu.tr
土耳其, Gebze, Kocaeli, 41400; Baku, AZ-1143
R. Suleymanov
Department of Electrical and Electronics Engineering, Antalya Bilim University
Email: smirhasan@gtu.edu.tr
土耳其, Antalya
Yasin Şale
Department of Physics, Gebze Technical University
Email: smirhasan@gtu.edu.tr
土耳其, Gebze, Kocaeli, 41400
Buket Kandemir
Department of Physics, Gebze Technical University
Email: smirhasan@gtu.edu.tr
土耳其, Gebze, Kocaeli, 41400
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