Enviar artigo por via de e-mail Diode Polarization and Resistive Switching in Metal/TlGaSe2 Semiconductor/Metal Devices
- Autores: Seyidov M.Y.1,2, Suleymanov R.A.3, Şale Y.1, Kandemir B.B.1
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Afiliações:
- Department of Physics, Gebze Technical University
- Institute of Physics Azerbaijan National Academy of Sciences
- Department of Electrical and Electronics Engineering, Antalya Bilim University
- Edição: Volume 52, Nº 16 (2018)
- Páginas: 2007-2016
- Seção: Physics of Semiconductor Devices
- URL: https://bakhtiniada.ru/1063-7826/article/view/205269
- DOI: https://doi.org/10.1134/S1063782618160273
- ID: 205269
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Resumo
The influence of electric field and current flow on the current–voltage (I–V) characteristics of TlGaSe2 layered semiconductor was investigated by using a two-point probe measurement system. Threshold-type switching in I–V characteristics associated with current–controlled memory effect was observed in all investigated samples. Observed switching characteristic is close to the most experimentally realizable memristive systems. Experimental findings were analyzed by using a model of metal–insulator–semiconductor–insulator–metal (MISIM) structure having memristive behavior.
Sobre autores
MirHasan Seyidov
Department of Physics, Gebze Technical University; Institute of Physics Azerbaijan National Academy of Sciences
Autor responsável pela correspondência
Email: smirhasan@gtu.edu.tr
Turquia, Gebze, Kocaeli, 41400; Baku, AZ-1143
R. Suleymanov
Department of Electrical and Electronics Engineering, Antalya Bilim University
Email: smirhasan@gtu.edu.tr
Turquia, Antalya
Yasin Şale
Department of Physics, Gebze Technical University
Email: smirhasan@gtu.edu.tr
Turquia, Gebze, Kocaeli, 41400
Buket Kandemir
Department of Physics, Gebze Technical University
Email: smirhasan@gtu.edu.tr
Turquia, Gebze, Kocaeli, 41400
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