Email this article Diode Polarization and Resistive Switching in Metal/TlGaSe2 Semiconductor/Metal Devices
- Authors: Seyidov M.Y.1,2, Suleymanov R.A.3, Şale Y.1, Kandemir B.B.1
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Affiliations:
- Department of Physics, Gebze Technical University
- Institute of Physics Azerbaijan National Academy of Sciences
- Department of Electrical and Electronics Engineering, Antalya Bilim University
- Issue: Vol 52, No 16 (2018)
- Pages: 2007-2016
- Section: Physics of Semiconductor Devices
- URL: https://bakhtiniada.ru/1063-7826/article/view/205269
- DOI: https://doi.org/10.1134/S1063782618160273
- ID: 205269
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Abstract
The influence of electric field and current flow on the current–voltage (I–V) characteristics of TlGaSe2 layered semiconductor was investigated by using a two-point probe measurement system. Threshold-type switching in I–V characteristics associated with current–controlled memory effect was observed in all investigated samples. Observed switching characteristic is close to the most experimentally realizable memristive systems. Experimental findings were analyzed by using a model of metal–insulator–semiconductor–insulator–metal (MISIM) structure having memristive behavior.
About the authors
MirHasan Yu. Seyidov
Department of Physics, Gebze Technical University; Institute of Physics Azerbaijan National Academy of Sciences
Author for correspondence.
Email: smirhasan@gtu.edu.tr
Turkey, Gebze, Kocaeli, 41400; Baku, AZ-1143
R. A. Suleymanov
Department of Electrical and Electronics Engineering, Antalya Bilim University
Email: smirhasan@gtu.edu.tr
Turkey, Antalya
Yasin Şale
Department of Physics, Gebze Technical University
Email: smirhasan@gtu.edu.tr
Turkey, Gebze, Kocaeli, 41400
Buket Bilgen Kandemir
Department of Physics, Gebze Technical University
Email: smirhasan@gtu.edu.tr
Turkey, Gebze, Kocaeli, 41400
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