Electrical Properties and Energy Parameters of n-FeS2/p-Cd1 –xZnxTe Heterojunctions

Аннотация

The conditions for fabricating n-FeS₂/p-Cd_{1 –x}Zn_xTe heterojunctions by the spray pyrolysis of thin pyrite films on p-Cd_{1 –x}Zn_xTe crystalline substrates are investigated. A comprehensive analysis of the current–voltage (I–V) and capacitance–voltage (C–V) characteristics makes it possible to establish the limitation of the reverse current by the space-charge region at small reverse biases and consider the mechanisms of current formation with the participation of energy levels near the heterojunction. A model of the energy profile of the n-FeS₂/p-Cd_{1 –x}Zn_xTe heterojunction is proposed, which turns out to be in good correspondence with the experimentally determined parameters and the dynamics of their change with a variation in temperature.