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Optical Properties of GaN Nanowires Grown by MBE on SiC/Si(111) Hybrid Substrate


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Abstract

The aim of this work is to demonstrate the fundamental possibility of Si-doped GaN nanowires growth on the buffer layer of silicon carbide on silicon substrate and to investigate the optical characteristics of this structures.

About the authors

I. V. Shtrom

St. Petersburg Academic University; Institute for Analytical Instrumentation; St. Petersburg State University

Author for correspondence.
Email: igorstrohm@mail.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 190103; St. Petersburg, 199034

N. G. Filosofov

St. Petersburg State University

Email: igorstrohm@mail.ru
Russian Federation, St. Petersburg, 199034

V. F. Agekian

St. Petersburg State University

Email: igorstrohm@mail.ru
Russian Federation, St. Petersburg, 199034

M. B. Smirnov

St. Petersburg State University

Email: igorstrohm@mail.ru
Russian Federation, St. Petersburg, 199034

A. Yu. Serov

St. Petersburg State University

Email: igorstrohm@mail.ru
Russian Federation, St. Petersburg, 199034

R. R. Reznik

St. Petersburg Academic University; Institute for Analytical Instrumentation; ITMO University

Email: igorstrohm@mail.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 190103; St. Petersburg, 197101

K. E. Kudryavtsev

Institute for Physics of Microstructures of the Russian Academy of Sciences

Email: igorstrohm@mail.ru
Russian Federation, Nizhny Novgorod, 603950

G. E. Cirlin

St. Petersburg Academic University; Institute for Analytical Instrumentation; ITMO University

Email: igorstrohm@mail.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 190103; St. Petersburg, 197101

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