Transport of hot charge carriers in Si, GaAs, InGaAs, and GaN submicrometer semiconductor structures with nanometer-scale clusters of radiation-induced defects

Abstract

The distributions of the radii of subclusters of radiation-induced defects and of the distances between the cores of these subclusters are calculated for Si, GaAs, and GaN. The features of the transport of hot charge carriers in the above materials upon irradiation with neutrons are discussed. A burst in the velocity of electrons in Si, GaAs, InGaAs, and GaN before and after irradiation is calculated for the first time; also, the extent of manifestation of the above effect in different semiconductor materials is compared.