Effects of irradiation with 8-MeV protons on n-3C-SiC heteroepitaxial layers

Abstract

The effects of 8-MeV proton irradiation on n-3C-SiC epitaxial layers grown by sublimation on semi-insulating 4H-SiC substrates are studied. Changes in the sample parameters were recorded by the Hall-effect method and judged from photoluminescence spectra. The Hall method was employed to distinguish between the effects of irradiation on the charge-carrier concentration and mobility. It is found that the charge-carrier removal rate (V_d) is ~110 cm^–1. Full compensation of the samples with an initial charge-carrier concentration of ~6.5 × 10¹⁷ cm^–3 is observed at irradiation doses of ~6 × 1015 cm^–2. It is found that the mobility at these doses decreased by only a factor of 2.5. Compared with 4H and 6H silicon carbide, no significant increase in the intensity of so-called defect-related photoluminescence is observed.