Email this article A study of deep centers in microplasma channels in GaP light-emitting diodes with green-emission spectrum
- Authors: Ionychev V.K.1, Shesterkina A.A.1
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Affiliations:
- Mordovian State University
- Issue: Vol 51, No 3 (2017)
- Pages: 370-373
- Section: Physics of Semiconductor Devices
- URL: https://bakhtiniada.ru/1063-7826/article/view/199633
- DOI: https://doi.org/10.1134/S1063782617030083
- ID: 199633
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Abstract
The statistical delay of microplasma breakdown in GaP light-emitting diodes with the green-emission spectrum is studied. The unusual profound effect of deep centers on the statistical delay of avalanche breakdown is observed in the temperature range of 300–380 K; this effect is caused by a variation in the charge state of these centers due to a reduction in the reverse bias applied to the p–n junction. Four deep levels are revealed and their parameters are determined.
About the authors
V. K. Ionychev
Mordovian State University
Author for correspondence.
Email: microelektro@mail.ru
Russian Federation, Saransk, 430000
A. A. Shesterkina
Mordovian State University
Email: microelektro@mail.ru
Russian Federation, Saransk, 430000
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