Email this article Specific features of the capacitance–voltage characteristics of a Cu–SiO2–p-InSb MIS structure
- Authors: Aliev R.A.1, Gajiev G.M.1, Gadzhialiev M.M.1, Ismailov A.M.1,2, Pirmagomedov Z.S.1
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Affiliations:
- Kh.I. Amirkhanov Institute of Physics, Dagestan Scientific Center
- Dagestan State University
- Issue: Vol 51, No 3 (2017)
- Pages: 367-369
- Section: Physics of Semiconductor Devices
- URL: https://bakhtiniada.ru/1063-7826/article/view/199630
- DOI: https://doi.org/10.1134/S1063782617030022
- ID: 199630
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Abstract
The capacitance–voltage and conductance–voltage characteristics of InSb-based MIS structures are measured at different probe signal frequencies with the aim of studying the influence exerted by the technological-synthesis conditions on the capacitive properties of these structures. The influence of positive charge built into the insulator on the sample characteristics is discussed. This influence manifests itself as a sharp capacitance “switch” upon changing the polarity of a low-field (E < 106 V/cm) external signal.
About the authors
R. A. Aliev
Kh.I. Amirkhanov Institute of Physics, Dagestan Scientific Center
Email: hadzhyGM@mail.ru
Russian Federation, Makhachkala, 367003
G. M. Gajiev
Kh.I. Amirkhanov Institute of Physics, Dagestan Scientific Center
Author for correspondence.
Email: hadzhyGM@mail.ru
Russian Federation, Makhachkala, 367003
M. M. Gadzhialiev
Kh.I. Amirkhanov Institute of Physics, Dagestan Scientific Center
Email: hadzhyGM@mail.ru
Russian Federation, Makhachkala, 367003
A. M. Ismailov
Kh.I. Amirkhanov Institute of Physics, Dagestan Scientific Center; Dagestan State University
Email: hadzhyGM@mail.ru
Russian Federation, Makhachkala, 367003; Makhachkala, 367003
Z. Sh. Pirmagomedov
Kh.I. Amirkhanov Institute of Physics, Dagestan Scientific Center
Email: hadzhyGM@mail.ru
Russian Federation, Makhachkala, 367003
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