Email this article Fabrication of a terahertz quantum-cascade laser with a double metal waveguide based on multilayer GaAs/AlGaAs heterostructures
- Authors: Khabibullin R.A.1, Shchavruk N.V.1, Pavlov A.Y.1, Ponomarev D.S.1, Tomosh K.N.1, Galiev R.R.1, Maltsev P.P.1, Zhukov A.E.2,3, Cirlin G.E.2,3, Zubov F.I.2, Alferov Z.I.2,3
-
Affiliations:
- Institute of Ultrahigh Frequency Semiconductor Electronics
- Saint Petersburg Academic University—Nanotechnology Research and Education Center
- Saint Petersburg Science Center
- Issue: Vol 50, No 10 (2016)
- Pages: 1377-1382
- Section: Physics of Semiconductor Devices
- URL: https://bakhtiniada.ru/1063-7826/article/view/198112
- DOI: https://doi.org/10.1134/S1063782616100134
- ID: 198112
Cite item
Open Access
Access granted
Subscription Access
Abstract
The Postgrowth processing of GaAs/AlGaAs multilayer heterostructures for terahertz quantumcascade lasers (QCLs) are studied. This procedure includes the thermocompression bonding of In–Au multilayer heterostructures with a doped n+-GaAs substrate, mechanical grinding, and selective wet etching of the substrate, and dry etching of QCL ridge mesastripes through a Ti/Au metallization mask 50 and 100 μm wide. Reactive-ion-etching modes with an inductively coupled plasma source in a BCl3/Ar gas mixture are selected to obtain vertical walls of the QCL ridge mesastripes with minimum Ti/Au mask sputtering.
About the authors
R. A. Khabibullin
Institute of Ultrahigh Frequency Semiconductor Electronics
Author for correspondence.
Email: khabibullin@isvch.ru
Russian Federation, Nagornyi pr. 7, str.5, Moscow, 117105
N. V. Shchavruk
Institute of Ultrahigh Frequency Semiconductor Electronics
Email: khabibullin@isvch.ru
Russian Federation, Nagornyi pr. 7, str.5, Moscow, 117105
A. Yu. Pavlov
Institute of Ultrahigh Frequency Semiconductor Electronics
Email: khabibullin@isvch.ru
Russian Federation, Nagornyi pr. 7, str.5, Moscow, 117105
D. S. Ponomarev
Institute of Ultrahigh Frequency Semiconductor Electronics
Email: khabibullin@isvch.ru
Russian Federation, Nagornyi pr. 7, str.5, Moscow, 117105
K. N. Tomosh
Institute of Ultrahigh Frequency Semiconductor Electronics
Email: khabibullin@isvch.ru
Russian Federation, Nagornyi pr. 7, str.5, Moscow, 117105
R. R. Galiev
Institute of Ultrahigh Frequency Semiconductor Electronics
Email: khabibullin@isvch.ru
Russian Federation, Nagornyi pr. 7, str.5, Moscow, 117105
P. P. Maltsev
Institute of Ultrahigh Frequency Semiconductor Electronics
Email: khabibullin@isvch.ru
Russian Federation, Nagornyi pr. 7, str.5, Moscow, 117105
A. E. Zhukov
Saint Petersburg Academic University—Nanotechnology Research and Education Center; Saint Petersburg Science Center
Email: khabibullin@isvch.ru
Russian Federation, ul. Khlopina 8/3, St. Petersburg, 194021; Universitetskaya nab. 5, St. Petersburg, 199034
G. E. Cirlin
Saint Petersburg Academic University—Nanotechnology Research and Education Center; Saint Petersburg Science Center
Email: khabibullin@isvch.ru
Russian Federation, ul. Khlopina 8/3, St. Petersburg, 194021; Universitetskaya nab. 5, St. Petersburg, 199034
F. I. Zubov
Saint Petersburg Academic University—Nanotechnology Research and Education Center
Email: khabibullin@isvch.ru
Russian Federation, ul. Khlopina 8/3, St. Petersburg, 194021
Zh. I. Alferov
Saint Petersburg Academic University—Nanotechnology Research and Education Center; Saint Petersburg Science Center
Email: khabibullin@isvch.ru
Russian Federation, ul. Khlopina 8/3, St. Petersburg, 194021; Universitetskaya nab. 5, St. Petersburg, 199034
Supplementary files
