Relation between the structural and phase transformations in titanium-oxide films and the electrical and photoelectric properties of TiO2–Si structures

Abstract

The effect of annealing in argon and oxygen plasma on the I–V characteristics and photoresponse of TiO₂–Si structures is investigated. The titanium oxide films are prepared by rf magnetron sputtering onto n-Si substrates. The observed features in the behavior of the electrical and photoelectric characteristics of the samples after annealing and treatment in oxygen plasma are attributed to a variation in the phase composition of the oxide film due to the appearance of anatase or rutile crystallites, depending on the treatment conditions.