Conduction in titanium dioxide films and metal–TiO2–Si structures

Abstract

The effect of the annealing of titanium oxide films on the electrical properties of metal–TiO₂–n-Si structures is investigated. It is shown that, regardless of the annealing temperature, the conductivity of the structures at positive gate potentials is determined by the space-charge-limited current in the insulator with traps exponentially distributed in terms of energy. At negative gate potentials, the main contribution to the current is provided by the generation of electron–hole pairs in the space-charge region in silicon. The properties of the TiO₂/n-Si interface depend on the structure and phase state of the oxide film, which are determined by the annealing temperature.