🔧На сайте запланированы технические работы
25.12.2025 в промежутке с 18:00 до 21:00 по Московскому времени (GMT+3) на сайте будут проводиться плановые технические работы. Возможны перебои с доступом к сайту. Приносим извинения за временные неудобства. Благодарим за понимание!
🔧Site maintenance is scheduled.
Scheduled maintenance will be performed on the site from 6:00 PM to 9:00 PM Moscow time (GMT+3) on December 25, 2025. Site access may be interrupted. We apologize for the inconvenience. Thank you for your understanding!

 

Electrical, optical, and photoluminescence properties of ZnO films subjected to thermal annealing and treatment in hydrogen plasma


Cite item

Full Text

Open Access Open Access
Restricted Access Access granted
Restricted Access Subscription Access

Abstract

The photoluminescence and optical absorption spectra and electrical properties of ZnO films grown by the metal–organic chemical vapor deposition and hydrothermal techniques, subjected to heat treatments and plasma treatment in a hydrogen atmosphere, are studied. It is shown that the adsorption of oxygen at grain boundaries upon annealing in an oxidizing atmosphere determines the electrical properties of the films. Vacuum annealing improves the electrical properties of the samples after degradation induced by annealing in air. Treatment in hydrogen plasma passivates surface states at the grain boundaries. The intrinsic photoluminescence intensity after plasma treatment is higher in the case of increased amounts of oxygen adsorbed at grain surfaces upon annealing in air. Surface states involving oxygen and hydrogen atoms are responsible for the high-intensity intrinsic photoluminescence band.

About the authors

Kh. A. Abdullin

National Nanotechnology Laboratory of Open Type

Email: skumekov@mail.ru
Kazakhstan, Almaty, 050000

M. T. Gabdullin

National Nanotechnology Laboratory of Open Type

Email: skumekov@mail.ru
Kazakhstan, Almaty, 050000

L. V. Gritsenko

Kazakh National Technical Research University

Email: skumekov@mail.ru
Kazakhstan, Almaty, 050013

D. V. Ismailov

National Nanotechnology Laboratory of Open Type

Email: skumekov@mail.ru
Kazakhstan, Almaty, 050000

Zh. K. Kalkozova

National Nanotechnology Laboratory of Open Type

Email: skumekov@mail.ru
Kazakhstan, Almaty, 050000

S. E. Kumekov

Kazakh National Technical Research University

Author for correspondence.
Email: skumekov@mail.ru
Kazakhstan, Almaty, 050013

Zh. O. Mukash

Kazakh National Technical Research University

Email: skumekov@mail.ru
Kazakhstan, Almaty, 050013

A. Yu. Sazonov

University of Waterloo

Email: skumekov@mail.ru
Canada, Waterloo, Ontario, N2L 3G1

E. I. Terukov

Ioffe Physical–Technical Institute

Email: skumekov@mail.ru
Russian Federation, St. Petersburg, 194021

Supplementary files

Supplementary Files
Action
1. JATS XML

Copyright (c) 2016 Pleiades Publishing, Ltd.