Surface Crystallization and Magnetization Reversal Processes in Amorphous Microwires

O. I. Aksenov; Аксенов О. И.; A. A. Fuks; Фукс А. А.; G. E. Abrosimova; Абросимова Г. Е.; D. V. Matveev; Матвеев Д. В.; A. S. Aronin; Аронин А. С.

doi:10.31857/S1028096023090029

Surface Crystallization and Magnetization Reversal Processes in Amorphous Microwires

Authors: Aksenov O.I.¹, Fuks A.A.¹^,2, Abrosimova G.E.¹, Matveev D.V.¹, Aronin A.S.¹
Affiliations:
1. Institute of Solid State Physics
2. National Research University Higher School of Economics
Issue: No 9 (2023)
Pages: 11-17
Section: Articles
URL: https://bakhtiniada.ru/1028-0960/article/view/137806
DOI: https://doi.org/10.31857/S1028096023090029
EDN: https://elibrary.ru/ZLHMIO
ID: 137806

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Abstract
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Abstract

The bulk-inhomogeneous crystallization of amorphous microwires of composition Fe_73.8Cu₁Nb_3.1B_9.1Si₁₃ has been studied. An assumption was put forward about the influence of the non-uniform distribution of tensile and compressive stresses in the bulk of microwires on their crystallization. It has been established that at the initial stages of crystallization the crystallization occurs in the near-surface region of a microwire with a thickness of about 2.5 μm. It has been established that the sizes of nanocrystals in the surface region of microwire are about 10 nm. It was found that the formation of an amorphous nanocrystalline layer on the microwire surface leads to an increase in the M_r/M_S ratio (ratio of remanent magnetization to saturation magnetization), which is associated with a decrease in the magnetic anisotropy due to a decrease in the stress level during heat treatment and nanocrystallization. Chemical etching of annealed microwires leads to a significant increase in the M_r/M_S ratio, which is due to an increase in the relative volume of the central domain layer. The results obtained indicate the potential for creating composite amorphous-nanocrystalline structures based on microwires. In the case of microwires of Fe_73.8Cu₁Nb_3.1B_9.1Si₁₃ composition, the predominant crystallization of the surface layer can increase the effect of the giant magnetic impedance. Such objects may have potential applications in sensorics, in particular, in magnetic field and strain sensors.

Keywords

amorphous microwires, structure, nanocrystallization, stresses, heat treatment, surface crystallization, magnetization reversal process, chemical etching, residual magnetization, X-ray diffraction, transmission electron microscopy, vibrational magnetometry.

References

Greer A.L., Cheng Y.Q., Ma E. // Mater. Sci. Eng. 2013. V. R74. P. 71. https://doi.org/10.1016/j.mser.2013.04.001
Постнова Е.Ю., Абросимова Г.Е., Аронин А.С. // Поверхность. Рентген., синхротр. и нейтрон. исслед. 2021. № 11. С. 5.
Абросимова Г.Е., Аронин А.С. // Поверхность. Рентген., синхротр. и нейтрон. исслед. 2018. № 5. С. 91.
Glezer A.M., Khriplivets I.A., Sundeev R.V., Louzguine-Luzgin D.V., Pogozhev Yu.S., Rogachev S.O., Bazlov A.I., Tomchuk A.A. // Mater. Let. 2020. V. 281. P. 128659. https://doi.org/10.1016/j.matlet.2020.128659
Inoue A., Ochiai T., Horio Y., Masumoto T. // Mater. Sci. Eng. 1994. V. A179/A180. P. 649. https://doi.org/10.1016/0921-5093(94)90286-0
Louzguine D.V., Inoue A. // J. Non-Cryst. Solids. 2002. V. 311. P. 281. https://doi.org/10.1016/S0022-3093(02)01375-3
Yavari A. R., Georgarakis K., Antonowicz J., Stoica M., Nishiyama N., Vaughan G., Chen M., Pons M. // Phys. Rev. Lett. 2012. V. 109. P. 085501. https://doi.org/10.1103/PhysRevLett.109.085501
Chiriac H., Ovari T.A., Pop G. // Phys. Rev. B 1995. V. 52. P. 10104. https://doi.org/10.1103/PhysRevB.52.10104
Herzer G. // Phys. Scr. 1993. V. 49. P. 307. https://doi.org/10.1088/0031-8949%2F1993%2FT49A% 2F054
Chiriac H., Ovari T.A. // ProgMater Sci. 1996. V. 40. P. 333. https://doi.org/10.1016/S0079-6425(97)00001-7
Fuks A., Abrosimova G., Aksenov O., Churyukanova M., Aronin A. // Crystals. 2022. V. 12. P. 1494. https://doi.org/10.3390/cryst12101494
Talaat A., Zhukova V., Ipatov M., Blanco J.M., Gonzalez-Legarreta L., Hernando B., del Val J.J., González J., Zhukov A. // J. Appl. Phys. 2014. V. 115. P. 17A313. https://doi.org/10.1063/1.4863484
Corte-León P., Zhukova V., Ipatov M., Blanco J.M., Gonzalez J., Zhukov A. // Intermetallics. 2019. V. 105. P. 92. https://doi.org/10.1016/j.intermet.2018.11.013
Gonzalez A., Zhukova V., Corte-Leon P., Chizhik A., Ipatov M., Blanco J. M., Zhukov A. // Sensors. 2022. V. 22. № 3. P. 1053. https://doi.org/10.3390/s22031053
Churyukanova M., Kaloshkin S., Shuvaeva E., Mitra A., Panda A.K., Roy R.K., Murugaiyan P., Corte-Leon P., Zhukova V., Zhukov A. // J. Magn. Magn. Mater. 2019. V. 492. P. 165598. https://doi.org/10.1016/j.jmmm.2019.165598
Zhukov A., Ipatov M., Corte-León P., Gonzalez- Legarreta L., Churyukanova M., Blanco J.M., Gonzalez J., Taskaev S., Hernando B., Zhukova V. // J. Alloys Compd. 2020. V. 814. P. 152225. https://doi.org/10.1016/j.jallcom.2019.152225
Clavaguera N., Pradell T., Jie Z., Clavaguera-Mora M.T. // Nanostruct. Mater. 1995. V. 6. P. 453. https://doi.org/10.1016/0965-9773(95)00094-1
Abrosimova G.E., Aronin A.S., Kholstinina N.N. // Phys. Solid State. 2010. V. 52. P. 445.
Chizhik A., Stupakiewicz A., Zhukov A., Maziewski A., Gonzalez J. // IEEE Trans. Magn. 2015. V. 51. P. 200234. https://doi.org/10.1109/INTMAG.2015.7157157
Chen D.M., Xing D.W., Qin F.X., Liu J.S., Wang H., Wang X.D., Sun J.F. // Phys. Status Solidi. A. 2013. V. 210. P. 2515. https://doi.org/10.1002/pssa.201329246
Usov N., Antonov A., Dykhne A., Lagarkov A. // J. Magn. Magn. Mater. 1997. V. 174. P. 127. https://doi.org/10.1016/S0304-8853(97)00130-3
Chiriac H., Ovari T.A., Pop G. // J. Magn. Magn. Mater. 1996. V. 157. P. 227. https://doi.org/10.1016/S0079-6425(97)00001-7S0079642597000017