Depth Distribution of Radiation Defects under Ion Irradiation of Silicon

N. V. Novikov; Новиков Н. В.; N. G. Chechenin; Чеченин Н. Г.; A. A. Shirokova; Широкова А. А.

doi:10.31857/S1028096023010181

Depth Distribution of Radiation Defects under Ion Irradiation of Silicon

Autores: Novikov N.V.¹, Chechenin N.G.¹, Shirokova A.A.¹
Afiliações:
1. Moscow State University, Skobeltsyn Institute of Nuclear Physics
Edição: Nº 1 (2023)
Páginas: 50-54
Seção: Articles
URL: https://bakhtiniada.ru/1028-0960/article/view/137658
DOI: https://doi.org/10.31857/S1028096023010181
EDN: https://elibrary.ru/BLSFQY
ID: 137658

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Resumo

The defect distribution density reaches its maximum at a depth that depends on the energy and mass of the ion. This depth decreases with increasing angle of incidence due to multiple scattering of primary ions in the surface layers of the target. As the ion mass increases, the maximum defect density increases according to a power law. The asymmetry of the maximum in the depth distribution of defects is associated with an increase in the elastic energy loss during ion stopping and a decrease in the ion transmission coefficient with increasing layer depth.

Palavras-chave

irradiated material, ion-induced defect, displacement per atom, elastic energy loss of ions.

Bibliografia

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