Direct Observation of Growth Processes on the Crystal Surface Initiated by the Impurities Capturing

The atomic force microscopy has allowed to register in experiments the development of a screw dislocation on surface of the growing dioxidine crystal triggered by input of tourmaline particles as solid impurities. For theoretical explanation of the process, there is proposed a three-stage mechanism assuming the (1) relaxation of stresses around the impurity particle through formation of one or more dislocations before its germetization at the first stage, then (2) additional formation of boundary dislocations in the moment of the particle been sealing by a growth layer at the second stage, and (3) appearance of the resulting dislocation after complete sealing of the impurity at the third stage. Thus, for the first time the phenomenon of dislocation propagating through growth layers was registered in nanoscale.