Modeling 2T937 Bipolar Transistors Based on Experimental Static and Frequency Characteristics

Аннотация

A method for modeling the 2T937 transistor is described. Calculations of its static and frequency characteristics are presented and the error in the model is assessed. Optimized parameters of a Gummel–Poon model are taken as the basis for modeling the transistor. It is shown that the model developed here can be used in computer aided design systems as a component base for the development of transistor devices.