Growing Cu2S Thin Films by Exposing a Copper Substrate to Gas-Phase Products of Brown Coal Hydrothermal Desulfurization
- Авторлар: Savitskii D.P.1, Stanishevskii Y.M.1
-
Мекемелер:
- Institute of Biochemical Technology and Nanotechnology
- Шығарылым: Том 92, № 1 (2018)
- Беттер: 164-171
- Бөлім: Physical Chemistry of Surface Phenomena
- URL: https://bakhtiniada.ru/0036-0244/article/view/169873
- DOI: https://doi.org/10.1134/S0036024418010235
- ID: 169873
Дәйексөз келтіру
Аннотация
Thin films of copper(I) sulfide (Cu2S) are synthesized on a copper substrate by exposing it to vapor-phase sulfur-containing products resulting from the hydrothermal desulfurization of brown coal. The synthesized 0.1-mm-thick films have grain sizes in the range of 10‒20 μm, electrical resistivity ρ = 0.92 Ω cm at T = 300 K, and bang gap Eg = 1.91 eV. The roughness of the films, in terms of the arithmetic mean deviation of the assessed profile, is Ra = 2.46 μm.
Негізгі сөздер
Авторлар туралы
D. Savitskii
Institute of Biochemical Technology and Nanotechnology
Хат алмасуға жауапты Автор.
Email: den.83@mail.ru
Ресей, Moscow, 117198
Ya. Stanishevskii
Institute of Biochemical Technology and Nanotechnology
Email: den.83@mail.ru
Ресей, Moscow, 117198
Қосымша файлдар
