Molecular layering of silicon and aluminum oxides on binary semiconductors


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Abstract

The formation of nanolayers of silicon and aluminum oxides, obtained by means of molecular layering (or atomic layer deposition (ALD technology)) on surfaces of GaAs, InAs, and InSb, is investigated. Conditions for the layer-wise growth of surface nanostructures are established, and some of their dielectric characteristics are estimated.

About the authors

Yu. K. Ezhovskii

St. Petersburg State Technological Institute (Technical University)

Author for correspondence.
Email: office@technolog.edu.ru
Russian Federation, St. Petersburg, 190013

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