Email this article Tin trifluoroacetylacetonate [Sn(C5H4O2F3)2] as a precursor of tin dioxide in APCVD process
- Authors: Popov V.S.1, Ignatov P.A.1, Churakov A.V.1, Simonenko E.P.1,2, Simonenko N.P.1,2, Ignatova N.N.3, Sevast’yanov V.G.1, Kuznetsov N.T.1
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Affiliations:
- Kurnakov Institute of General and Inorganic Chemistry
- Moscow Institute of Physics and Technology (State University)
- Moscow State Technical University of Radioengeneering, Electronics, and Automation
- Issue: Vol 61, No 5 (2016)
- Pages: 545-553
- Section: Synthesis and Properties of Inorganic Compounds
- URL: https://bakhtiniada.ru/0036-0236/article/view/166395
- DOI: https://doi.org/10.1134/S003602361605017X
- ID: 166395
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Abstract
A new method of synthesis of volatile complex, tin trifluoroacetylacetonate [Sn(C5H4O2F3)2], was proposed. The prepared compound was identified by IR spectroscopy, CH analysis, X-ray powder diffraction, and DTA/TGA, the composition was confirmed by MALDI-TOF mass spectrometry, crystal structure was established. Thin films of tin dioxide on silicon were obtained by atmospheric pressure chemical vapor deposition using [Sn(C5H4O2F3)2] as a precursor. The morphology and composition of the films were studied by scanning electron microscopy, EDX elemental analysis, and X-ray powder diffraction. Surface resistance and light transmission in visible and near IR region were studied.
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About the authors
V. S. Popov
Kurnakov Institute of General and Inorganic Chemistry
Email: v_sevastyanov@mail.ru
Russian Federation, Leninskii pr. 31, Moscow, 119991
P. A. Ignatov
Kurnakov Institute of General and Inorganic Chemistry
Email: v_sevastyanov@mail.ru
Russian Federation, Leninskii pr. 31, Moscow, 119991
A. V. Churakov
Kurnakov Institute of General and Inorganic Chemistry
Email: v_sevastyanov@mail.ru
Russian Federation, Leninskii pr. 31, Moscow, 119991
E. P. Simonenko
Kurnakov Institute of General and Inorganic Chemistry; Moscow Institute of Physics and Technology (State University)
Email: v_sevastyanov@mail.ru
Russian Federation, Leninskii pr. 31, Moscow, 119991; 9 Institutskiy per., Dolgoprudny, Moscow Region, 141700
N. P. Simonenko
Kurnakov Institute of General and Inorganic Chemistry; Moscow Institute of Physics and Technology (State University)
Email: v_sevastyanov@mail.ru
Russian Federation, Leninskii pr. 31, Moscow, 119991; 9 Institutskiy per., Dolgoprudny, Moscow Region, 141700
N. N. Ignatova
Moscow State Technical University of Radioengeneering, Electronics, and Automation
Email: v_sevastyanov@mail.ru
Russian Federation, pr. Vernadskogo 78, Moscow, 119454
V. G. Sevast’yanov
Kurnakov Institute of General and Inorganic Chemistry
Author for correspondence.
Email: v_sevastyanov@mail.ru
Russian Federation, Leninskii pr. 31, Moscow, 119991
N. T. Kuznetsov
Kurnakov Institute of General and Inorganic Chemistry
Email: v_sevastyanov@mail.ru
Russian Federation, Leninskii pr. 31, Moscow, 119991
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