Quantum memory on a charge qubit in an optical microresonator


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Abstract

A quantum-memory unit scheme on the base of a semiconductor structure with quantum dots is proposed. The unit includes a microresonator with single and double quantum dots performing frequencyconverter and charge-qubit functions, respectively. The writing process is carried out in several stages and it is controlled by optical fields of the resonator and laser. It is shown that, to achieve high writing probability, it is necessary to use high-Q resonators and to be able to suppress relaxation processes in quantum dots.

About the authors

A. V. Tsukanov

Institute of Physics and Technology; Moscow Institute of Physics and Technology (State University)

Author for correspondence.
Email: a-v-ts@mail.ru
Russian Federation, Moscow, 117218; Dolgoprudnyi, Moscow oblast, 141700

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