Photoabsorption by the electron subsystem of a semiconductor nanoparticle

Abstract

The IR photoabsorption cross section of a semiconductor nanoparticle has been calculated. Light is absorbed by conduction electrons and trapped electrons in the volume and surface of the nanoparticle. Electron concentrations have been obtained by minimizing the total free energy of charges in the system. The photoabsorption cross section has two characteristic maxima corresponding to the absorption by conduction electrons and by trapped electrons in the nanoparticle volume. The number of trapped electrons on the surface is relatively small, so that they do not contribute to the total cross section.