Structure, composition, and electrical resistance of thin ruthenium metallic layers obtained by pulsed chemical vapor deposition

Resumo

We systemize the experimental data on the relationship of the specific electrical resistance, density, structure, and composition of thin ruthenium layers (TRLs) synthesized in the temperature range 160-310 °C by pulsed chemical vapor deposition with a carbonyl-diene precursor Ru(CO)₃(C₆H₈) and NH₃ and N₂O as second reagents. The main impurity in TRLs after their deposition and annealing is carbon with a concentration of ~30-50 at.%. To increase the density and decrease the electrical resistance of TRLs to values below 50 μOhm∙cm it is reasonable to use N₂O in the synthesis and also to apply the subsequent thermal annealing of TRLs at temperatures up to 700 °C, which improves the crystal structure of the layers.