A Method of Operational Control of the Homogeneity of the Distribution of the Electrical Properties of Semiconductor Materials

Abstract

An effective method has been developed for the operative control of the homogeneity of the distribution of electrophysical properties in semiconductor materials as measured by thermo-emf. This method is applicable to samples with predominantly one type of conductivity. In this case, it is possible to obtain qualitative and quantitative results of the concentration of charge carriers. It is shown that in the case of the mixed conductivity type, only a qualitative analysis of the concentration of charge carriers is possible, which, however, can also be useful and informative when studying the processes of doping semiconductor crystals.