Detectors on the Basis of High-Purity Epitaxial GaAs Layers for Spectrometry of X and Gamma Rays

S. V. Chernykh; A. V. Chernykh; A. P. Chubenko; L. N. Pavlyuchenko; Yu. N. Sveshnikov; Yu. N. Glybin; M. P. Konovalov; A. V. Panichkin; S. I. Didenko

doi:10.1134/S0020441218040176

Detectors on the Basis of High-Purity Epitaxial GaAs Layers for Spectrometry of X and Gamma Rays

Authors: Chernykh S.V.¹, Chernykh A.V.¹, Chubenko A.P.¹^,2, Pavlyuchenko L.N.², Sveshnikov Y.N.³, Glybin Y.N.⁴, Konovalov M.P.¹, Panichkin A.V.¹, Didenko S.I.¹
Affiliations:
1. National University of Science and Technology MISiS
2. Lebedev Physical Institute
3. JSC Elma-Malakhit–JSC Concern Energomera
4. LLC SNIIP-Plus
Issue: Vol 61, No 5 (2018)
Pages: 665-672
Section: Nuclear Experimental Technique
URL: https://bakhtiniada.ru/0020-4412/article/view/160381
DOI: https://doi.org/10.1134/S0020441218040176
ID: 160381

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Abstract

The characteristics of detectors of soft-X and γ rays based on high-purity epitaxial GaAs layers are discussed. The characteristics of detectors with different rectifying contacts are compared, that is, those with a Schottky barrier and a p–n junction. The spectral characteristics of the manufactured detectors that were obtained under the irradiation by ⁵⁷Co and ²⁴¹Am sources at different bias voltages and in a photovoltaic mode and the simulation results using the Geant 3.21 software package are presented.

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Detectors on the Basis of High-Purity Epitaxial GaAs Layers for Spectrometry of X and Gamma Rays

Full Text

Abstract

About the authors

Supplementary files