Control of the output transistors gating voltage for high voltage push-pull pulser

Аннотация

The schematic design is proposed to control the output of high voltage MOSFET switches of a push-pull high voltage pulser for mass spectrometry applications. The design provides a way to form symmetrical opening and closing gating pulses for the output MOSFET transistors. This solution enables one to avoid the case of high through current, which can damage the output transistors of the pulser. Furthermore, the output pulse width can be decreased up to 70 ns while the repetition rate can exceed 100 kHz using the suggested schematic. The performance of the suggested design is proved by experimental testing of a pulser built in our laboratory.