作者的详细信息

Shvets, V. I.

期	栏目	标题	文件
卷 467, 编号 1 (2016)	Chemistry	The role of the etchant ion in the formation and growth of pores in silicon during its etching in hydrofluoric acid solutions
卷 470, 编号 1 (2016)	Chemistry	A model of the mechanism of the chemical interaction of the etchant ion (HF₂)^– with silicon during its electrochemical etching in hydrofluoric acid solutions
卷 473, 编号 2 (2017)	Chemistry	Pore nucleation and growth in n-type Si during its electrochemical etching
卷 474, 编号 1 (2017)	Chemistry	Special aspects of the photoluminescence of thermally annealed porous silicon layers
卷 477, 编号 2 (2017)	Chemistry	The effect of the type of conductivity on the initiation and formation of pores in silicon during electrochemical etching
卷 481, 编号 2 (2018)	Chemistry	Origin of Porous Silicon Photoluminescence Peaks in the Wavelength Range 460–700 nm
卷 487, 编号 1 (2019)	Chemistry	Features of Pore Nucleation in p-Si during Its Electrochemical Etching