Автор туралы ақпарат

Abramova, E. N.

Шығарылым	Бөлім	Атауы	Файл
Том 467, № 1 (2016)	Chemistry	The role of the etchant ion in the formation and growth of pores in silicon during its etching in hydrofluoric acid solutions
Том 470, № 1 (2016)	Chemistry	A model of the mechanism of the chemical interaction of the etchant ion (HF₂)^– with silicon during its electrochemical etching in hydrofluoric acid solutions
Том 473, № 2 (2017)	Chemistry	Pore nucleation and growth in n-type Si during its electrochemical etching
Том 474, № 1 (2017)	Chemistry	Special aspects of the photoluminescence of thermally annealed porous silicon layers
Том 477, № 2 (2017)	Chemistry	The effect of the type of conductivity on the initiation and formation of pores in silicon during electrochemical etching
Том 481, № 2 (2018)	Chemistry	Origin of Porous Silicon Photoluminescence Peaks in the Wavelength Range 460–700 nm
Том 487, № 1 (2019)	Chemistry	Features of Pore Nucleation in p-Si during Its Electrochemical Etching