Non-Quasi-Static p-n Junction Model Without User-defined Recursion
- 作者: Semyonov É.V.1, Malakhovskij O.Y.2
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隶属关系:
- Tomsk State University of Control Systems and Radioelectronics
- JSC “Scientific-Research Institute of Semiconductor Devices”
- 期: 卷 62, 编号 6 (2019)
- 页面: 1090-1095
- 栏目: Article
- URL: https://bakhtiniada.ru/1064-8887/article/view/242002
- DOI: https://doi.org/10.1007/s11182-019-01819-4
- ID: 242002
如何引用文章
详细
A model of the p–n junction that adequately describes the non-quasi-static effects of accumulation and relaxation of nonequilibrium charge carriers is considered. In this case, the diffusion charge equation is written in a closed form resolved with respect to the diffusion charge. This allowed computer programming of this model to be performed without user-defined recursion resolving the differential equation with respect to the diffusion charge. As a result, the non-quasi-static model of the p–n junction has been realized as an equivalent circuit containing only conventional quasi-static elements of computer-aided design systems.
作者简介
É. Semyonov
Tomsk State University of Control Systems and Radioelectronics
编辑信件的主要联系方式.
Email: edwardsemyonov@narod.ru
俄罗斯联邦, Tomsk
O. Malakhovskij
JSC “Scientific-Research Institute of Semiconductor Devices”
Email: edwardsemyonov@narod.ru
俄罗斯联邦, Tomsk
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