电邮这篇文章 High-Sensitive Two-Layer Photoresistors Based on p-CdxHg1–xTe with a Converted Near-Surface Layer
- 作者: Ismailov N.D.1, Talipov N.K.2, Voitsekhovskii A.V.3
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隶属关系:
- Institute of Physics, Azerbaijan National Academy of Sciences
- Peter the Great Military Academy of Strategic Rocket Forces
- National Research Tomsk State University
- 期: 卷 60, 编号 12 (2018)
- 页面: 2186-2192
- 栏目: Article
- URL: https://bakhtiniada.ru/1064-8887/article/view/239876
- DOI: https://doi.org/10.1007/s11182-018-1344-3
- ID: 239876
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详细
The results of an experimental study of photoelectric characteristics of two-layer photoresistors based on р-CdxHg1–xTe (x = 0.24−0.28) with a thin near-surface layer of n-type obtained by treatment in atmospheric gas plasma are presented. It is shown that the presence of a potential barrier between the p- and n-regions causes high photosensitivity and speed of operation of such photoresistors at T = 77 K
作者简介
N. Ismailov
Institute of Physics, Azerbaijan National Academy of Sciences
编辑信件的主要联系方式.
Email: ismailovnamik@yahoo.com
阿塞拜疆, Baku
N. Talipov
Peter the Great Military Academy of Strategic Rocket Forces
Email: ismailovnamik@yahoo.com
俄罗斯联邦, Balashikha
A. Voitsekhovskii
National Research Tomsk State University
Email: ismailovnamik@yahoo.com
俄罗斯联邦, Tomsk
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