Mean Free Path of Different Segments of the Dislocation Loop in FCC Single Crystals
- 作者: Kurinnaya R.I.1, Zgolich M.V.1, Cherepanov D.N.1, Starenchenko V.A.1
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隶属关系:
- Tomsk State University of Architecture and Building
- 期: 卷 60, 编号 4 (2017)
- 页面: 631-637
- 栏目: Article
- URL: https://bakhtiniada.ru/1064-8887/article/view/238160
- DOI: https://doi.org/10.1007/s11182-017-1118-3
- ID: 238160
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详细
Numerical value of the shear zone diameter is refined. It is assumed that the shear zone is bounded by long strong dislocation barriers formed in the course of reaction between glissile dislocation segments of the loop and dislocations of non-coplanar sliding systems. Based on the modified model of inter-dislocation contact interactions, the mean free path and the probabilities of occurrence of long strong junctions formed by arbitrary components of the dislocation loop are determined. Results are obtained for different orientations of the crystal deformation axes.
作者简介
R. Kurinnaya
Tomsk State University of Architecture and Building
编辑信件的主要联系方式.
Email: riklaz@mail.ru
俄罗斯联邦, Tomsk
M. Zgolich
Tomsk State University of Architecture and Building
Email: riklaz@mail.ru
俄罗斯联邦, Tomsk
D. Cherepanov
Tomsk State University of Architecture and Building
Email: riklaz@mail.ru
俄罗斯联邦, Tomsk
V. Starenchenko
Tomsk State University of Architecture and Building
Email: riklaz@mail.ru
俄罗斯联邦, Tomsk
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