Restriction of a Number of Levels of Dimensional Quantization in Elements of Nanoelectronics
- Авторы: Davydov V.N.1, Zadorozhny O.F.1, Karankevich O.A.1
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Учреждения:
- Tomsk State University of Control Systems and Radioelectronics
- Выпуск: Том 62, № 3 (2019)
- Страницы: 499-504
- Раздел: Physics of Semiconductors and Dielectrics
- URL: https://bakhtiniada.ru/1064-8887/article/view/241676
- DOI: https://doi.org/10.1007/s11182-019-01737-5
- ID: 241676
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Аннотация
Realization of a criterion of dimensional quantization in quantum wells of various profiles is considered. It is established that there is the limit number of the discrete state of a free charge carrier in the well, above which the criterion of dimensional quantization is not fulfilled. It is shown that in quantum wells of rectangular and triangular profiles, the number of levels of dimensional quantization cannot exceed two or three. The result obtained is applicable to quantum wells, quantum wires, and quantum dots.
Об авторах
V. Davydov
Tomsk State University of Control Systems and Radioelectronics
Автор, ответственный за переписку.
Email: dvn@fet.tusur.ru
Россия, Tomsk
O. Zadorozhny
Tomsk State University of Control Systems and Radioelectronics
Email: dvn@fet.tusur.ru
Россия, Tomsk
O. Karankevich
Tomsk State University of Control Systems and Radioelectronics
Email: dvn@fet.tusur.ru
Россия, Tomsk
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