Nonlinearity of the Diffusion Coefficient of Hot Carriers in the Bulk of the Semiconductor Under the Action of Electric and Magnetic Fields

Аннотация

Based on the phenomenological consideration of the drift and carrier heating processes in the bulk of the А^IIIB^V type semiconductors in strong crossed electric and magnetic fields, a quasi-three-dimensional model describing main kinetic components of the current parameters is constructed. The behavior of the diffusion coefficient under these conditions is analyzed. It is found that the inequality of the longitudinal and transverse components of the effective mass and kinetic energy leads to strong differences in the components of the diffusion coefficient and drift velocity. The behavior of the drift and diffusion characteristics in magnetic fields with various induction intensities is analyzed. It is revealed that when the magnetic induction increases, the value of the longitudinal component of the velocity increases, and subsequently, falling sections appear on the drift transverse induction characteristic, which indicates the possibility of using this effect to create nonlinear inductive active elements. Anisotropy is observed on the transverse diffusion induction characteristic, which is manifested in the fact that for large values of B_z > 2 T, splitting of the maximum in two components occurs, which is also promising from the point of view of creating a new class of converter devices.