Temperature Behavior of Plasma Reflection Spectra of (Bi2–xSbx)Te3 (0 < х < 1) Crystals in the Temperature Interval 80–300 K
- Авторлар: Stepanov N.P.1, Stepanova L.É.1, Lozovskaya A.S.2
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Мекемелер:
- Trans-Baikal State University
- Trans-Baikal Institute of Entrepreneurship
- Шығарылым: Том 61, № 8 (2018)
- Беттер: 1429-1434
- Бөлім: Article
- URL: https://bakhtiniada.ru/1064-8887/article/view/240857
- DOI: https://doi.org/10.1007/s11182-018-1552-x
- ID: 240857
Дәйексөз келтіру
Аннотация
A decrease in the resonant frequency ωр of plasma fluctuations of free charge carriers with increasing temperature observed in all Bi2-xSbx (0 < х < 1) crystals can be explained only partly by the increased polarization background ε∞ of the crystal. An analysis of the experimental data allows us to state that the change of ωр and of the electrical conductivity σ is also caused by the decrease of the ratio of the free carrier concentration to their effective mass r/m* (by a factor of 1.47) whose value almost coincides with the anomalous increase in the Hall coefficient in the temperature interval from 80 to 300 K.
Авторлар туралы
N. Stepanov
Trans-Baikal State University
Хат алмасуға жауапты Автор.
Email: np-stepanov@mail.ru
Ресей, Chita
L. Stepanova
Trans-Baikal State University
Email: np-stepanov@mail.ru
Ресей, Chita
A. Lozovskaya
Trans-Baikal Institute of Entrepreneurship
Email: np-stepanov@mail.ru
Ресей, Chita
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