Temperature Behavior of Plasma Reflection Spectra of (Bi2–xSbx)Te3 (0 < х < 1) Crystals in the Temperature Interval 80–300 K


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Аннотация

A decrease in the resonant frequency ωр of plasma fluctuations of free charge carriers with increasing temperature observed in all Bi2-xSbx (0 < х < 1) crystals can be explained only partly by the increased polarization background ε of the crystal. An analysis of the experimental data allows us to state that the change of ωр and of the electrical conductivity σ is also caused by the decrease of the ratio of the free carrier concentration to their effective mass r/m* (by a factor of 1.47) whose value almost coincides with the anomalous increase in the Hall coefficient in the temperature interval from 80 to 300 K.

Авторлар туралы

N. Stepanov

Trans-Baikal State University

Хат алмасуға жауапты Автор.
Email: np-stepanov@mail.ru
Ресей, Chita

L. Stepanova

Trans-Baikal State University

Email: np-stepanov@mail.ru
Ресей, Chita

A. Lozovskaya

Trans-Baikal Institute of Entrepreneurship

Email: np-stepanov@mail.ru
Ресей, Chita

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