Determination of Electron Temperature in DA-pHEMT Heterostructures by Shubnikov – de Haas Oscillation Method


Дәйексөз келтіру

Толық мәтін

Ашық рұқсат Ашық рұқсат
Рұқсат жабық Рұқсат берілді
Рұқсат жабық Тек жазылушылар үшін

Аннотация

The electron temperature of a two-dimensional electron gas heated by an electric field in DA-pHEMT heterostructures was determined by the Shubnikov – de Haas (SdH) oscillation method separately for each size-quantization subband. An analysis of the Fourier spectra of SdH oscillations showed that throughout the entire range of electron temperatures obtained, harmonics associated with different size-quantization subbands and transitions between the Landau levels of these subbands dominate in the spectra. To separate the SdH oscillations into individual harmonics, we used the approximation of the magnetic-field dependences of the oscillations by theoretical expressions using the ratio between the peak heights in the Fourier spectra. It is shown that this method allows one to determine the values of the electron temperature in case when the electron concentrations in the first and second subbands are close in magnitude. The obtained values of the electron temperature correspond to the literature data.

Авторлар туралы

D. Protasov

Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences; Novosibirsk State Technical University

Хат алмасуға жауапты Автор.
Email: protasov@isp.nsc.ru
Ресей, Novosibirsk; Novosibirsk

A. Bakarov

Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences

Email: protasov@isp.nsc.ru
Ресей, Novosibirsk

A. Toropov

Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences

Email: protasov@isp.nsc.ru
Ресей, Novosibirsk

V. Kostyuchenko

Novosibirsk State Technical University

Email: protasov@isp.nsc.ru
Ресей, Novosibirsk

A. Klimov

Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences; Novosibirsk State Technical University

Email: protasov@isp.nsc.ru
Ресей, Novosibirsk; Novosibirsk

K. Zhuravlev

Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences; Novosibirsk State University

Email: protasov@isp.nsc.ru
Ресей, Novosibirsk; Novosibirsk

Қосымша файлдар

Қосымша файлдар
Әрекет
1. JATS XML

© Springer Science+Business Media, LLC, part of Springer Nature, 2018