A New Method of Obtaining an  n – p -Structure on the Basis of the Defective Semiconductor AgIn 5 S 8

A. G. Guseinov; V. M. Salmanov; R. M. Mamedov; R. Dzhabrailova; A. Z. Magomedov

doi:10.1007/s11182-018-1277-x

A New Method of Obtaining an n–p-Structure on the Basis of the Defective Semiconductor AgIn₅S₈

Авторлар: Guseinov A.G.¹, Salmanov V.M.¹, Mamedov R.M.¹, Dzhabrailova R.², Magomedov A.Z.¹
Мекемелер:
1. Baku State University
2. Azerbaijan University of Architecture and Construction
Шығарылым: Том 60, № 10 (2018)
Беттер: 1747-1751
Бөлім: Article
URL: https://bakhtiniada.ru/1064-8887/article/view/239483
DOI: https://doi.org/10.1007/s11182-018-1277-x
ID: 239483

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Аннотация

The type of electrical conductivity of А¹В³₅С⁶₈ semiconductor compounds with defective crystalline structure is modified by the influence of powerful laser radiation. It is shown that at certain power and wavelength of laser radiation acting on the single-crystal п-AgIn₅S₈, an area with the p-type of conductivity is formed in the irradiated region of the crystal. Current-voltage characteristics of homo-junctions created on the basis of n-AgIn₅S₈ are recorded.