Effect of a Short-Period InGaN/GaN Superlattice on the Efficiency of Blue LEDs at High Level of Optical Pumping

Аннотация

We present the results of experimental studies of internal quantum efficiency of photoluminescence of blue LED heterostructures based on multiple In_xGa_1–xN/GaN quantum wells with short-period In_yGa_1–yN/GaN superlattices containing small amounts of In at high levels of optical pumping. Introduction of an In_yGa_1–yN/GaN superlattice from the side of the n-region of a LED In_xGa_1–xN/GaN heterostructure allows to increase the value of its internal quantum efficiency presumably by reducing the quantum-confined Stark effect and Auger recombination rate.