Determining the Equivalent Circuit Elements of Heterostructures with Multiple Quantum Wells

Аннотация

Analytical dependences of the equivalent circuit elements of heterostructures on the material properties of quantum wells, their location, and bias voltage of the heterostructure are obtained. On the basis of these dependences, expressions for calculating the dependences of the equivalent capacitance and equivalent resistance of the heterostructure on the test signal frequency and bias voltage are found.