Studying the Formation of Si (100) Stepped Surface in Molecular-Beam Epitaxy

Abstract

Experimental studies of the formation of a stepped surface structure during molecular-beam epitaxy of silicon on a Si (100) substrate have been carried out in wide ranges of variation of the substrate temperature and silicon growth rate. The conditions of the transition from a two-domain structure of the Si (100) surface to a single-domain structure associated with the formation of diatomic steps are determined using reflection high-energy electron diffraction. It is shown that the effect of an increase in the substrate temperature on the transition to a single-domain structure is non-monotonic: a single-domain surface forms in the region of relatively low temperatures, whereas a two-domain surface forms at high temperatures. The transition to a single-domain structure during the experiment is possible only, if the silicon growth rate is increased above a certain minimum value.