Detectors Based on Low-Barrier Mott Diodes and Their Characteristics in the 150–250 GHz Range

P. V. Volkov; N. V. Vostokov; A. V. Goryunov; L. M. Kukin; V. V. Parshin; E. A. Serov; V. I. Shashkin

doi:10.1134/S1063785019030179

Detectors Based on Low-Barrier Mott Diodes and Their Characteristics in the 150–250 GHz Range

作者: Volkov P.V.¹, Vostokov N.V.¹, Goryunov A.V.¹, Kukin L.M.², Parshin V.V.², Serov E.A.², Shashkin V.I.¹
隶属关系:
1. Institute for Physics of Microstructures, Russian Academy of Sciences
2. Institute of Applied Physics, Russian Academy of Sciences
期: 卷 45, 编号 3 (2019)
页面: 239-241
栏目: Article
URL: https://bakhtiniada.ru/1063-7850/article/view/208244
DOI: https://doi.org/10.1134/S1063785019030179
ID: 208244

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详细

The characteristics of millimeter-wavelength detectors based on planar Mott diodes with near-surface δ-doping operating without a constant bias are discussed. These detectors have a volt–watt sensitivity of ~1000 V/W with NEP ~ 10 pW/Hz^1/2 in the 150–250 GHz range. The obtained estimates reveal the possibility of an additional order-of-magnitude enhancement of the performance characteristics of detectors with smaller areas of the diode barrier contact.