High-Efficiency Conversion of High-Power-Density Laser Radiation


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详细

AlGaAs/GaAs-based semiconductor photovoltaic converters (PVCs) of laser radiation, capable of operating at an illuminance up to 9 kW/cm2 with retained isothermal state have been studied. This state was confirmed by the logarithmic shape of dependences of the open-circuit voltage on the power density of incident laser radiation. At maximum illuminance, the open-circuit voltage level was close to 1.33 V. It is shown that the proposed PVCs can provide laser radiation conversion at an 840-nm wavelength with efficiency above 51% at an incident radiation power density of 2.5 kW/cm2.

作者简介

A. Panchak

Ioffe Physical Technical Institute, Russian Academy of Sciences

编辑信件的主要联系方式.
Email: a.panchak@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

P. Pokrovskiy

Ioffe Physical Technical Institute, Russian Academy of Sciences

Email: a.panchak@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

D. Malevskiy

Ioffe Physical Technical Institute, Russian Academy of Sciences

Email: a.panchak@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

V. Larionov

Ioffe Physical Technical Institute, Russian Academy of Sciences

Email: a.panchak@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

M. Shvarts

Ioffe Physical Technical Institute, Russian Academy of Sciences

Email: a.panchak@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

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